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Incidentally the band offsets are expected to decrease with rising temperature due to thermal band broadening,thus minimizing significant deterioration of the hole mobility at
high temperatures,as shown in Fig.12.
Besides the lead chalcogenide family,the approach of matrix/inclusion band alignment has been successfully implemented in the SiGe system.72 The electrical conductivity of a Si86.25Ge13.75P1.05 sample was improved by 54% using the modulation-doping approach in (Si95Ge5)0.65(Si70Ge30P3)0.35.The Si nanoparticles form proper band alignments with the SiGe matrix to promote the flow of carriers from the nanoparticles into the matrix.The enhancement in electrical conductivity comes from the 50% improvement of the carrier mobility.Additionally,the thermal conductivity can be kept low due to the low thermal conductivity of the nanoparticles.The enhanced electrical conductivity coupling with negligibly changed Seebeck coefficient and the lower thermal conductivity produces a peak ZT of \x021.3 at 1173 K in (Si95Ge5)0.65(Si70Ge30P3)0.35.
Incidentally the band offsets are expected to decrease with rising temperature due to thermal band broadening,thus minimizing significant deterioration of the hole mobility at
high temperatures,as shown in Fig.12.
Besides the lead chalcogenide family,the approach of matrix/inclusion band alignment has been successfully implemented in the SiGe system.72 The electrical conductivity of a Si86.25Ge13.75P1.05 sample was improved by 54% using the modulation-doping approach in (Si95Ge5)0.65(Si70Ge30P3)0.35.The Si nanoparticles form proper band alignments with the SiGe matrix to promote the flow of carriers from the nanoparticles into the matrix.The enhancement in electrical conductivity comes from the 50% improvement of the carrier mobility.Additionally,the thermal conductivity can be kept low due to the low thermal conductivity of the nanoparticles.The enhanced electrical conductivity coupling with negligibly changed Seebeck coefficient and the lower thermal conductivity produces a peak ZT of \x021.3 at 1173 K in (Si95Ge5)0.65(Si70Ge30P3)0.35.
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